abstract |
It is an object of the invention to improve the reliability of a semiconductor device.nIn the semiconductor device according to the embodiment of the present invention, the element isolation region STI extending in the X direction includes an intersection region R1 in which the memory gate electrodes MG extending in the Y direction orthogonal to the X direction intersect in a plan view. At this time, in the intersection region R1, the width ES1 in the Y direction on one end side of the source region SR side is larger than the width ES2 in the Y direction on the other side edge side on the control gate electrode side. |