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filingDate 2015-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65578fabbc4bde40d932a6eacebf08aa
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publicationDate 2016-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201606930-A
titleOfInvention Semiconductor device and method of manufacturing same
abstract It is an object of the invention to improve the reliability of a semiconductor device.nIn the semiconductor device according to the embodiment of the present invention, the element isolation region STI extending in the X direction includes an intersection region R1 in which the memory gate electrodes MG extending in the Y direction orthogonal to the X direction intersect in a plan view. At this time, in the intersection region R1, the width ES1 in the Y direction on one end side of the source region SR side is larger than the width ES2 in the Y direction on the other side edge side on the control gate electrode side.
priorityDate 2014-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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