| abstract |
A photoresist stripping method includes: providing a semiconductor substrate, a immersing step, and a stripping step, wherein the semiconductor substrate has a substrate, a pad, a protective layer, a under bump metal layer, a patterned photoresist layer, and a patterned photoresist layer covering the under bump metal layer and one side of the bump, and the patterned photoresist layer and the side surface of the bump form a first bonding interface, the pattern A second bonding interface is formed between the photoresist layer and the underlying metal layer. In the immersing step, the bonding strength of the first bonding interface is weakened due to the contact of the patterned photoresist with a chemical liquid. The semiconductor substrate is washed with a fluid having a suitable impact force in the stripping step, and the patterned photoresist layer can be peeled off from the substrate. |