abstract |
The present invention relates to an etching composition, a method of preparing the composition, and a method of producing a semiconductor device using the composition. The composition may comprise a first mineral acid, at least one decane mineral acid salt formed by a reaction between a second inorganic acid and a decane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of sulfuric acid, fuming sulfuric acid, nitric acid, phosphoric acid, and combinations thereof. |