http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201603274-A

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filingDate 2014-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79315c8b752f364de988d053f6f11484
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publicationDate 2016-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201603274-A
titleOfInvention Fin field effect transistor and manufacturing method thereof
abstract A fin field effect transistor (FinFET) and a method of fabricating the same. A FinFET includes a substrate having an upper surface and an insulator formed on an upper surface of the substrate. The substrate has at least one recessed fin extending upward from the upper surface of the substrate. The insulator includes a lateral portion adjacent to the recessed fin and a central portion adjacent the outer side portion, wherein an upper surface of the outer side portion is higher than an upper surface of the central portion. One of the upper surfaces of the recessed fin is lower than the upper surface of the central portion.
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Total number of triples: 30.