http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201603153-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd446fb0d73aa96d044fea2eaa3c8ebc |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2015-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0464544bdd9a4b34395fb0f76863a2c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96ef777f34866cab16cef23cfa13273f |
| publicationDate | 2016-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201603153-A |
| titleOfInvention | Semiconductor component having at least one through-contact in a carrier substrate and method of making such a through-contact |
| abstract | A measure capable of having certain electrical properties and high mechanical stability even in a thick carrier substrate, wherein the semiconductor component has a carrier substrate (10), at least one wiring plane (17), located at a front side of the carrier substrate (10), and at least one through joint (110) extending from the front side wiring plane (17) to the carrier substrate (10) and causing the front side wiring plane (17) And a connection between a conductive line (18) at a foot point of the through contact (110), wherein the through contact (110) is formed as a front side through contact opening in the carrier substrate (10) In the form of 11), the through-contact opening (11) is at least partially filled with a conductive material (13), whereinnThe through-contact opening (11) is completely filled with four layers (12) to (16) continuously formed on the wall of the through-contact opening (11), and the number and material of the layers (12) to (16) The thickness and order are selected according to the desired electrical resistance of the through-contact (11a) and the desired mechanical properties of the through-contact (110). Furthermore, a method for a through-contact of a carrier substrate of a semiconductor component, wherein at least a through-contact opening (11) is produced on the front side of the carrier substrate (10), which has a certain image width and height First, a first layer (12) of a dielectric material is formed on the front side of the structure of the carrier substrate (10), in particular on the wall of the through-contact opening (11), and then A layer (13) made of a conductive material is applied through the wall of the contact opening (11) and the through-hole opening (11) is completely filled, wherein the filling of the through-contact opening (11) is repeatedly borrowed A series of at least four layers (12) to (16) are applied, and the layers (12) to (16) are composed of a dielectric material and a conductive material, wherein the number of layers (12) to (16) and materials are The thickness and order are selected according to the desired electrical resistance of the through joint (110) and the desired mechanical properties of the through joint (110). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170397-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I646650-B |
| priorityDate | 2014-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5352426 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524915 |
Total number of triples: 21.