| abstract |
A semiconductor device includes: a plurality of isolation regions extending into a semiconductor substrate, a substrate strip having a first width between the plurality of opposite portions of the isolation regions; a source/drain region having an overlapping substrate a portion of the strip, wherein an upper portion of the source/drain region has a second width greater than the first width, and an upper portion of the source/drain region has a plurality of substantially vertical sidewalls; and a source/drain The deuterated region has a plurality of internal sidewalls that contact the vertical sidewalls of the source/drain regions. |