| abstract |
The present invention is an etching apparatus which aims to realize an etching apparatus which has high selectivity, high controllability, and high throughput.nThe solution is to prepare an etching apparatus including a processing chamber (21), a supply portion for a reaction species, and a lamp (43) for vacuum ultraviolet light irradiation. In this etching apparatus, the first process of forming a reaction product by adsorbing the reaction species on the surface of the wafer (13) is repeated, and the vacuum ultraviolet light is irradiated onto the wafer via the vacuum ultraviolet light irradiation lamp (43). 13) The second step of detaching the reaction product and the third process of exhausting the detached reaction product can be etched, and the cooling of the wafer (13) can be omitted. The time of the person. |