| abstract |
The composition for polishing a tantalum material of the present invention comprises abrasive grains and water, and a compound represented by the formula (A) and a compound represented by the formula (B), and has a pH of 8 to 12,n□ (R1 to R4 are a group selected from an alkyl group having 4 or less carbon atoms, a hydroxyalkyl group having 4 or less carbon atoms, and a aryl group which may be substituted, and X- is an anion),n□ (X1 represents a hydrogen atom, an amine group, or a bond with a C1 atom, and when bonded to a C1 atom, the H1 atom is absent, and X2 represents a hydrogen atom, an amine group, an aminoalkyl group or a bond with a C1 atom, When it is bonded to the C1 atom, the C1-N1 bond becomes a double bond, and the H2 atom does not exist, l is 1 to 6, m is 1 to 4, and n is 0 to 4). |