| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-367 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-367
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2015-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a878c1393c1dd894642c2f196e83109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_762bf44ef1a9cafe441dda0077bb92c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47a591f0406f96c337c62d2a3f214035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4027f3a6660faa368e280be7cf23c0cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32114ad69a306fc76da1c82a0f0c1d7e |
| publicationDate |
2015-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201545274-A |
| titleOfInvention |
Interconnect assembly with through-hole perforation and stress relief features |
| abstract |
A semiconductor device according to some embodiments includes a substrate structure and a conductive interconnect extending through at least a portion of the substrate structure. The conductive interconnects can include stress relief features that are always through the via and accommodate thermal expansion and/or thermal shrinkage of the material to manage internal stresses in the semiconductor device. A method of fabricating the semiconductor device in accordance with some embodiments includes removing material of the conductive interconnect to form a stress relief gap. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I788247-B |
| priorityDate |
2014-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |