| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
2015-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35936a2f2ce6a64363fb74b03662a9a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86a4fcdc9a7fc716ea5029c23cda3c99
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3ad07a8f268c0dc4e84aa616618987f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_903893f13bb20805cdf6875ad720d0e9 |
| publicationDate |
2015-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201544619-A |
| titleOfInvention |
High growth rate process for conformal aluminum nitride |
| abstract |
A method of depositing a conformal aluminum nitride film on a semiconductor substrate is provided. The disclosed method involves: (a) exposing a substrate to an aluminum-containing precursor; (b) blowing the aluminum-containing precursor for a period of time insufficient to remove substantially all of the gas phase of the aluminum-containing precursor (c) exposing the substrate to a nitrogen-containing precursor to form aluminum nitride; (d) blowing the nitrogen-containing precursor; and (e) repeating (a) to (d). Get higher growth rates and 100% step coverage and shape retention. |
| priorityDate |
2014-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |