| abstract |
Provided is a crystalline laminated structure which is excellent in semiconductor characteristics, particularly excellent in electrical conductivity, and capable of being electrically connected in the longitudinal direction and having excellent electrical characteristics. The laminated structure is provided with a semiconductor layer directly or via another layer on a metal layer containing a uniaxially oriented metal as a main component, and the main component of the semiconductor layer is a crystalline oxide semiconductor, the crystallization The oxide semiconductor is an oxide semiconductor containing one or two or more metals selected from gallium, indium, and aluminum, and is uniaxially oriented. |