http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201541589-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate | 2014-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8eb5c3348144fd8621802a417283c90e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b0eb3c7eceae6836d47c40a116768a6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_648b7e03d52ce6e763b6d3b7cc55f924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4777c43beabdef548f039fed05f243f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_467d9281cfb5375e2ed03b4760c3c9bc |
| publicationDate | 2015-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201541589-A |
| titleOfInvention | Semiconductor structure and method of manufacturing same |
| abstract | The present invention provides a semiconductor structure and a method of fabricating the same. The semiconductor structure includes a wafer substrate having an upper surface and a lower surface, and a conductive pillar disposed in the wafer substrate and defining a conductive pillar by an insulating deep trench, wherein the insulating deep trench penetrates the wafer substrate Upper and lower surfaces. The method of fabricating a semiconductor structure includes the steps of forming a deep trench from a surface of a wafer substrate, and thereby defining a conductive region in the wafer substrate. A dopant is doped in the conductive region. The deep trench is filled with an insulating material to form an insulating deep trench. And thinning the wafer substrate from the lower surface of the wafer substrate to exposing the insulating deep trench, so that the conductive region is isolated from the wafer substrate to form a conductive pillar. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10347524-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I611505-B |
| priorityDate | 2014-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.