http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201541482-A

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filingDate 2014-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d86409f839d9521d561a71287cfccc3e
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publicationDate 2015-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201541482-A
titleOfInvention High energy density asymmetric type pseudo capacitor and manufacturing method thereof
abstract A high energy density asymmetric pseudo-capacitor comprising a cathode plate, an anode plate, and a separator disposed between the anode plate and the cathode plate for ion penetration. The cathode plate comprises a first conductive substrate and a porous cathode film formed on the first conductive substrate, the porous cathode film has a plurality of sheet-like composites, and penetrates between the gaps of the sheet-like composite and is combined with the sheet-like composite a mesh structure in contact with the object, the sheet composite is a composite having graphene, a transition metal compound and a carbon nanotube, the network structure has a carbon nanotube, the anode plate comprises a second conductive substrate and is formed in the second An anode film on a conductive substrate having a composite of graphene and a carbon nanotube. The porous cathode film of the present invention is directly formed on the first conductive substrate to effectively improve the capacitance characteristics.
priorityDate 2014-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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