| abstract |
A Group III nitride nanowire is disposed on the substrate. The longitudinal length of the nanowire is defined as a channel region of the first group III nitride material, a source region electrically coupled to the first terminal of the channel region, and electrically coupled to the second terminal of the channel region. Bungee area. A second Group III nitride material on the first Group III nitride material acts as a charge inducing layer, and/or a barrier layer on the surface of the nanowire. The gate insulator and/or the gate conductor completely coaxially surround the nanowire in the channel region. The drain and source contacts can completely coaxially surround the drain and source regions. |