| abstract |
Embodiments described herein relate to methods of forming an air gap interconnect. A metal spacer layer is conformally deposited on the substrate on which the mandrel structure is formed. The metal spacer layer is etched to form spacer features and to remove the mandrel structure from the substrate. A variety of other dielectric deposition, patterning, and etching steps can be performed to pattern the materials present on the substrate as desired. Finally, a trench is formed between adjacent spacer features and a cap layer is deposited over the trench to form an air gap between adjacent spacer features. For encapsulation, the interconnect vias may be provided to contact at least one of the spacer features of adjacent air gaps. |