| abstract |
The invention provides a microelectromechanical wafer structure with precise gap and a manufacturing method thereof, and the manufacturing method comprises the following steps. First, a first wafer is provided, the first wafer having a first surface. Then, at least two doped regions having different doping concentrations or different dopants are formed on the first surface such that each of the doped regions has a different oxidation rate. Then, the first wafer is thermally oxidized to form oxide layers of different thicknesses on different doped regions. Thereafter, a second wafer is provided. The second wafer is then bonded to the first wafer. |