| abstract |
A method for producing an oxide of a semiconductor or the like which can be used for a transistor is provided. In particular, a method for producing an oxide having few defects such as grain boundaries is provided. One aspect of the present invention is a semiconductor device including: an oxide semiconductor; an insulator; and an electrical conductor, wherein the oxide semiconductor includes a region where the oxide semiconductor and the conductor overlap each other with an insulator, and the oxide semiconductor includes an equivalent Grains having a diameter of 1 nm or more and crystal grains having an equivalent circle diameter of less than 1 nm. |