| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-2485 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2011-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51e8aaa2ac43d56789084bb7ec4bc89f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8fc29bfb0eb0cea816ebb7fd9d616f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4a0979b376f798ac33909239383c646
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_410eb3d7a5082e7ef63f384ddab779cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a951a38a492289161f08a8090329ba68 |
| publicationDate |
2015-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201537613-A |
| titleOfInvention |
Plasma processing device |
| abstract |
The present invention provides a plasma processing method and a plasma processing apparatus which are capable of ensuring a stable process area in a wide range from low microwave power to high microwave power.nThe present invention includes: a processing chamber that generates plasma therein; a plasma generating means for generating the plasma; a sample stage for placing a wafer in the processing chamber; and the wafer is performed by the plasma An etched plasma processing apparatus, characterized in that the plasma generating means includes a power source for supplying electric power for generating the plasma, and is capable of turning on/off the electric power of the power source, and simultaneously turning on a peak value during conduction. The electric power is set to a value that does not cause plasma instability in a state where plasma is generated by continuous discharge, and the time average value of the above electric power is controlled by changing the above-described on/off shift ratio. |
| priorityDate |
2011-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |