http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201535750-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c87b3d7ac100dbdc7843d82cb5ae2491 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2014-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e0f56c4e42a37bcc0db7fbb4e9ef805 |
| publicationDate | 2015-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201535750-A |
| titleOfInvention | Thin film transistor and method of manufacturing same |
| abstract | The present invention relates to a thin film transistor and a method of manufacturing the same. The thin film transistor comprises a substrate, a dual channel semiconductor layer, a semiconductor protection layer, a gate, a gate dielectric layer, a source, and a drain. The dual channel semiconductor layer includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is made of a metal oxide semiconductor material and formed over the substrate. The second semiconductor layer is made of the metal oxide semiconductor material doped with an oxygen absorbing metal and formed on the first semiconductor layer. A semiconductor protective layer is formed on the second semiconductor layer. The gate is formed and located above the substrate. A gate dielectric layer is formed between the gate and the dual channel semiconductor layer. The source and the drain are adjacent to the two-channel semiconductor layer, formed over the substrate, and electrically connected to the two-channel semiconductor layer. |
| priorityDate | 2014-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 84.