| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2015-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94be08b26f8d4214f1b952ccdf04b9f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_338c3aa685654dd0c9a720a8b20b3fbf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f457e7dc5f3c1a3cf1666f0a67cb5861 |
| publicationDate |
2015-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201535673-A |
| titleOfInvention |
Semiconductor device, module and electronic device |
| abstract |
One aspect of the present invention provides a semiconductor device having a low parasitic capacitance. In addition, a semiconductor device with low power consumption is provided. A semiconductor device comprising a transistor and a capacitor element, the transistor comprising: a first electrical conductor; a first insulator on the first electrical conductor; a semiconductor having a region overlapping the first electrical conductor via the first electrical insulator; a second insulator; a second conductor having a region overlapping the semiconductor via the second insulator; a third conductor and a fourth conductor having a region in contact with the top surface of the semiconductor, the capacitor comprising: a layer in a layer of the same electrical conductor; a layer in the same layer as the third electrical conductor and the fourth electrical conductor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I731121-B |
| priorityDate |
2014-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |