http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201535519-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d51b723a2d8eb04c7a282a4cc006b70a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate | 2015-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e263b814ca5413ce071527b545ba87a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba316a61024788b7db88e10aef2ed124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d95e06c5c54207f36e4ca9577ba367ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93102cdc85205654a2e1cc60f1fa7f8b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1f853b95a028fe2953dee3095a8f86e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c49389c91e5b178617c30ba8c92b8e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e59df3c21c28d35b8a9c35cbe6d824b |
| publicationDate | 2015-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201535519-A |
| titleOfInvention | Method for producing nitride film and method for controlling compressive stress of the nitride film |
| abstract | The present invention relates to a method for producing a nitride thin film which stably maintains a film quality by atomic layer deposition and which can easily adjust a compressive stress, and performs a unit period including at least one of the following four steps to form a nitrogen having compressive stress on a substrate. a film, the four steps, comprising: a first step of supplying a source gas to the substrate, at least a portion of the source gas being adsorbed onto the substrate; and a second step of supplying a first purge gas to the substrate; In the third step, a stress adjustment gas containing nitrogen (N2) and a reaction gas containing a nitrogen component (N) other than nitrogen (N2) are simultaneously supplied to the substrate in a plasma state, thereby forming a unit deposition on the substrate. a membrane; and a fourth step of supplying a second purge gas to the substrate. |
| priorityDate | 2014-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.