| abstract |
The present invention relates to a method of producing a thin inorganic film on a substrate, in particular, an atomic layer deposition method. The method comprises subjecting a compound of the formula (I) to a gaseous or hazy state Ln---M--Xm (I) □ and depositing a compound of the formula (I) from a gaseous or hazy state onto a solid substrate, wherein R1, R2, R3, R4, R5 and R6 are each independently hydrogen, alkyl or trialkylsulfonyl, n is an integer from 1 to 3, M is a metal or a semimetal, and X is a coordination with M. Body, and m is an integer from 0 to 4. |