| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 |
| filingDate |
2015-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c6267d8c775da162e94c833c3742ac |
| publicationDate |
2015-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201532197-A |
| titleOfInvention |
Semiconductor device, electronic device, and method of manufacturing semiconductor device |
| abstract |
One of the objects of the present invention is to provide a semiconductor device suitable for miniaturization. One aspect of the present invention is a semiconductor device comprising: a first transistor; a second transistor located above the first transistor; an insulating film between the first transistor and the second transistor; a wiring between the crystal and the insulating film; and an electrode, wherein the electrode and the wiring have a region overlapping each other, the insulating film having a function of reducing diffusion of water or hydrogen, the channel of the first transistor having a single crystal semiconductor, and the second electricity The channel of the crystal has an oxide semiconductor, and the gate electrode of the second transistor contains the same material as that of the electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114570-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I769333-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I690060-B |
| priorityDate |
2014-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |