| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b55c349b43c3ecba4977fd52cc8f8c67 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-92247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83191
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45144 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-27 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-02 |
| filingDate |
2014-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b60a7bbd8a53df9b805291155fe4437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45f3e75392730f01a4d41db42f018fa2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6fd396982571291ceb4307e5518a538 |
| publicationDate |
2015-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201532154-A |
| titleOfInvention |
Film, dicing die, film manufacturing method, and semiconductor device |
| abstract |
An object of the present invention is to provide an adhesive film capable of producing a highly reliable semiconductor device with good yield and use thereof.nThe present invention is an adhesive film for embedding a first semiconductor element fixed to a substrate and fixing a second semiconductor element different from the first semiconductor element to a member to be bonded, and thermally hardening The dielectric constant at 1 MHz is 4.00 or less. The dielectric loss tangent at 1 MHz after heat hardening is preferably 0.06 or less. The melt viscosity at 120 ° C and a shear rate of 50 s -1 is preferably 50 Pa. s above and 3000Pa. s below. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I729164-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I719178-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I636109-B |
| priorityDate |
2013-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |