| abstract |
Provided is a film forming method of a Ti film which can form a Ti film which has little Cl residual and has a relatively low impedance even in a low-temperature film formation.nThe substrate is placed in a chamber, and a processing gas containing TiCl 4 gas as a Ti source and H 2 gas as a reducing gas is introduced, and when a plasma is formed in the chamber to form a Ti film on the substrate, in the chamber, In addition to the process gas, Ar gas is introduced as a plasma generating gas, and Ar gas is plasma-formed to generate Ar ions, and Ar ions are applied to the Ti film deposited on the substrate to promote the detachment of Cl from the Ti film. |