http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201530775-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2014-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ff0c1cd17716b3beb9cd477fbca9562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c81ea87b75dcf5d0d572386c1c54c1f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5fd41d238e0589cae04c47b9ed0c95b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10dff1c999046039996fa6fd931b60f6 |
| publicationDate | 2015-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201530775-A |
| titleOfInvention | Field effect transistor structure and manufacturing method thereof |
| abstract | In some embodiments, a field effect transistor structure includes a body structure, a plurality of dielectric structures, a gate structure, and a source or drain region. The gate structure is formed on the body structure. The source or drain region is embedded in the body structure adjacent to the gate structure and extends beyond the dielectric structure. The source or drain region contains a stressor material that is constant different from the lattice constant of the bulk structure. The source or drain region includes a first region and a second region. A first region is formed on a first level of the top of the dielectric structures. The second region includes a downwardly tapered sidewall and is formed below the first horizontal plane and abuts the corresponding dielectric structures. |
| priorityDate | 2014-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.