http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201530771-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate | 2014-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c81ea87b75dcf5d0d572386c1c54c1f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc9cb5bb011a330bd0a9cb5dbcb7108f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5fd41d238e0589cae04c47b9ed0c95b |
publicationDate | 2015-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-201530771-A |
titleOfInvention | Transistor having embedded source or drain region including laterally extending portion and method of fabricating the same |
abstract | In some embodiments, in one method, a body structure having a gate structure disposed thereon is provided. The gate structure includes a gate sidewall that spans the body structure. A spacer is formed over the sidewall of the gate. A first recess is formed in the body structure. The first groove is formed beside the spacer and extends laterally under the spacer. A groove extension is formed under the first groove to extend a vertical depth of one of the first grooves. The stressor material having a different lattice constant from the lattice constant of the bulk structure is grown such that the extended first recess is filled. |
priorityDate | 2014-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.