http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201530771-A

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filingDate 2014-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c81ea87b75dcf5d0d572386c1c54c1f
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publicationDate 2015-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201530771-A
titleOfInvention Transistor having embedded source or drain region including laterally extending portion and method of fabricating the same
abstract In some embodiments, in one method, a body structure having a gate structure disposed thereon is provided. The gate structure includes a gate sidewall that spans the body structure. A spacer is formed over the sidewall of the gate. A first recess is formed in the body structure. The first groove is formed beside the spacer and extends laterally under the spacer. A groove extension is formed under the first groove to extend a vertical depth of one of the first grooves. The stressor material having a different lattice constant from the lattice constant of the bulk structure is grown such that the extended first recess is filled.
priorityDate 2014-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 22.