| abstract |
The present invention relates to cleaning an ion implantation system or a component thereof with a reactive cleaning agent capable of growing/eroding a filament in the ion source of the arc chamber to appropriately control the temperature in the arc chamber to achieve the desired filament Extreme growth or replacement of the erosion of the filament. The use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx (where x has a stoichiometrically appropriate value or range of values) is also described for use at ambient temperature, elevated temperature or plasma conditions. The area of the ion implanter or the components of the implanter are cleaned in an in situ or off-site cleaning arrangement. Among the particular reactive cleaning agents, BrF3 is described as being useful for cleaning an ion implantation system or one or more components thereof in an in situ or off-site cleaning arrangement. Also described is a method of cleaning a pre-stage conduit of an ion implantation system to at least partially remove ionization-related deposits from the pre-stage conduit, the method comprising contacting the pre-stage conduit with a purge gas, Wherein the purge gas is chemically reactive with the deposit. Methods of improving the performance and extending the life of an ion implantation system are also described, the method comprising contacting a cathode with a gas mixture. |