| abstract |
One of the objects of one embodiment of the present invention is to provide a crystalline oxide semiconductor which can be used for a semiconductor or the like of a transistor. One aspect of the present invention is a method of fabricating an oxide semiconductor using a sputtering apparatus, wherein the sputtering apparatus includes: a target comprising indium, an element M (aluminum, gallium, antimony or tin), zinc, and oxygen; a substrate facing the surface of the target; and a magnet unit including the first magnet and the second magnet disposed on the back side of the target, and passing through a distance from the magnet unit to the substrate at a vertical distance of 10 mm and parallel to The film was formed under the conditions of a maximum intensity of the horizontal magnetic field in the plane of the back surface of the target of 350 G or more and 2000 G or less. |