| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2255 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0328 |
| filingDate |
2014-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eac66593f863a9f290ced4bc56629af8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_089bc66918c1a60a9ac390ddcbaf520d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b5fbb7c87ab027c65e79fdfb066bd4c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74b9cf9bfa8519bd4a6495f74ab92a6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b20cf137469f4f9191eb53c171febbd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56d291aa4859ae2a8cd53674557ffe56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31ed0e7191632a5f9009755f39fe3f4c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c555b4775438c7f68d1989c240e895d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01cd19963303720d983c66c36402f1e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb69358c7a37eff2c60cf0459f62b678 |
| publicationDate |
2015-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201528531-A |
| titleOfInvention |
Method for manufacturing semiconductor substrate, semiconductor substrate, method for manufacturing solar cell element, and solar cell element |
| abstract |
The present invention provides a method of manufacturing a semiconductor substrate having a diffusion layer, comprising: providing an n-type diffusion layer forming composition and a p-type diffusion layer forming composition in different regions on at least a portion of the semiconductor substrate, Wherein the n-type diffusion layer forming composition contains glass particles containing a donor element and a dispersion medium, the p-type diffusion layer forming composition containing glass particles and a dispersion medium containing an acceptor element; and forming by heat treatment An n-type diffusion layer and a step of forming a p-type diffusion layer. |
| priorityDate |
2013-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |