http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201528322-A

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
filingDate 2014-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3ad19474b95e07a88f2776aee05a580
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publicationDate 2015-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201528322-A
titleOfInvention Control of etch rate using modeling, feedback, and impedance matching
abstract A method for achieving an etch rate is described. The method includes receiving a calculated variable associated with processing a workpiece within a plasma chamber. The method further includes passing the calculated variable through a model to generate a value of the calculated variable at an output of the model, identifying a calculated processing rate associated with the value, and identifying a predetermined process based on the calculated processing rate rate. The method also includes identifying a predetermined variable to be achieved at the output based on the predetermined processing rate, and identifying characteristics associated with the real and imaginary parts of the predetermined variable. The method includes controlling a variable circuit component to achieve the characteristics to further achieve the predetermined variable.
priorityDate 2013-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 20.