| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-34 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-022 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-40 |
| filingDate |
2014-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cafc7bca3f0e7a6f7d28e4f4b3e643a1 |
| publicationDate |
2015-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201527607-A |
| titleOfInvention |
Alkali pretreatment for electroplating |
| abstract |
Prior to electroplating, a semiconductor wafer having one or more recessed features, such as through-via vias (TSVs), by having a wafer with a buffer (eg, a borate buffer) and having about 7 and about Pre-wetting liquid contact between 13 and pre-treatment. Previous treatments have been particularly helpful for wafers with acid-sensitive nickel-containing seed layers such as NiB and NiP. The pre-wetting liquid is preferably degassed prior to contact with the wafer substrate. This pretreatment is preferably carried out under sub-atmospheric pressure to prevent bubble formation in the recessed features. After the wafer is pretreated, a metal such as copper is electrodeposited from the acidic plating solution to fill the recessed features on the wafer. The illustrated pretreatment minimizes corrosion of the seed layer during plating and reduces plating defects. |
| priorityDate |
2013-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |