abstract |
An embodiment of the invention provides a p-type metal oxide semiconductor material having the chemical formula: In(1-a)Ga(1-b)Zn(1+a+b)O4, wherein 0≦a≦0.1, 0≦b≦ 0.1, and 0 < a + b ≦ 0.16, and the p-type metal oxide semiconductor material has a hole carrier concentration of between 1 × 10 11 cm -3 and 5 × 10 18 cm -3 . |