| abstract |
This technology relates to a semiconductor device and a solid-state image sensor which can more easily improve crack resistance.nThe semiconductor device includes an upper substrate including a Si substrate and a wiring layer laminated on the Si substrate, and a lower substrate including a Si substrate and a wiring layer laminated on the Si substrate, and bonded to the upper substrate. Further, a bonding pad for wire bonding or detection is formed on the upper substrate, and each of the wiring layers from the bonding pad to the Si substrate of the lower substrate is provided with a radiation layer to protect the wire bonding or A pad for the corner or side of the pad for probing. The present technology can be applied to a solid-state imaging element. |