| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate |
2014-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d3dfd81d48e233818df506ca71839d2 |
| publicationDate |
2015-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201519394-A |
| titleOfInvention |
Semiconductor device and method of forming same |
| abstract |
The present invention provides a semiconductor device including a first dielectric layer formed on a substrate, and a first conductive structure buried in the first dielectric layer, wherein a top surface of the first conductive structure and the first dielectric layer One surface of the electric layer forms a first inverted trapezoidal shape; a second conductive structure is buried in the first dielectric layer, wherein one of the top surface of the second conductive structure and the first dielectric layer Forming a second inverted trapezoidal shape; a second dielectric layer is formed on the first dielectric layer; and a third conductive structure is buried in the second dielectric layer, wherein the bottom of the third conductive structure Directly contacting the top surface of the first conductive structure; and the bottom of the third conductive structure conforming to the first inverted trapezoidal shape. The present invention also provides a method of forming a semiconductor device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9905456-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10651079-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10157782-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110233132-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110024103-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110024103-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I637475-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11232978-B2 |
| priorityDate |
2013-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |