abstract |
The semiconductor device of the present invention includes: an interlayer insulating film INS2; an adjacent Cu wiring M1W formed in the interlayer insulating film INS2; and an insulating barrier film BR1 which is in contact with the surface of the interlayer insulating film INS2 and the surface of the Cu wiring M1W, And covering the interlayer insulating film INS2 and the Cu wiring M1W. Further, between the adjacent Cu wirings M1W, the interlayer insulating film INS2 has the damaged layer DM1 on its surface, and has an electric field alleviating layer containing a nitrogen concentration higher than that of the damaged layer DM1 at a position deeper than the damaged layer DM1. ER1. |