| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45561 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-54 |
| filingDate |
2014-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_239b8853f364c7883e21862878d099a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c0ce72054b166339619a618da7c073e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1138e97cc4f8b4c32ce9343d9f2b4418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_903893f13bb20805cdf6875ad720d0e9 |
| publicationDate |
2015-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201516174-A |
| titleOfInvention |
Sequential precursors in atomic layer deposition multi-station/batch reactors |
| abstract |
Disclosed herein is a method of depositing a layer of material for depositing a layer of material on a plurality of semiconductor substrates in a plurality of processing chambers in more than one processing chamber. The method can include applying a film precursor flowing from a common source to a first substrate at a first processing station and a second substrate at a second processing station, wherein the timing of the agent steps of the film precursor is staggered such that There is substantially no agent for the first substrate during the first agent phase of the second substrate agent, and no agent for the second substrate during the second agent phase of the first substrate agent. . Also disclosed herein is an apparatus having a plurality of processing stations housed in one or more reaction chambers, and a machine readable body for interleaving the first and second substrate steps of the first and second processing stations The controller of the instruction. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11111581-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11725282-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I714619-B |
| priorityDate |
2013-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |