| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2014-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b2671005bc7ce71dc85a1f4f9692e20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e9e91168d4739ff4d33862fe0025498
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5a79f4c83d6887d5708274a362a3a58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7704ba557cbe048a15ed797336e513a |
| publicationDate |
2015-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201515107-A |
| titleOfInvention |
Oxide semiconductor film and semiconductor device |
| abstract |
One aspect of the present invention provides a crystalline oxide semiconductor film which can be applied to a semiconductor film or the like of a transistor. In particular, one aspect of the present invention provides a crystalline oxide semiconductor film having few defects such as grain boundaries. One aspect of the present invention is a crystalline oxide semiconductor film on a substrate, wherein when an electron beam diffraction apparatus having a beam diameter of 1 nm is used, the observation portion is changed one-dimensionally in a range of 700 nm, The semiconductor film includes a region having five or less portions where an electron diffraction pattern is observed which exhibits a discontinuous point. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10942408-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11537019-B2 |
| priorityDate |
2013-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |