http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201513366-A

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filingDate 2014-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0dc058bb59017b8a9bcf55bcd324bc03
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publicationDate 2015-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201513366-A
titleOfInvention Semiconductor device
abstract One of the objects of one embodiment of the present invention is to provide a semiconductor device using an oxide semiconductor and achieving miniaturization while maintaining good electrical characteristics. The semiconductor device includes: an oxide semiconductor film and a barrier film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; and a gate insulating film in contact with the oxide semiconductor film, the source electrode, and the drain electrode; A gate electrode that is in contact with the gate insulating film, wherein the barrier film is formed on the same surface as the oxide semiconductor film using the same material, and the conductivity of the barrier film is higher than that of the oxide semiconductor film.
priorityDate 2013-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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