http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201512448-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec83ea8e6721b1a5654b038fdb9b223f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5093 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-54 |
| filingDate | 2014-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c6a97a17af9a455e61739f6daf327bc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f07ec17a86fe3baadf198054f14eab1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67d942c6f24654b157079991f39cae79 |
| publicationDate | 2015-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201512448-A |
| titleOfInvention | Structure for electronic device, plasma CVD device, and film formation method |
| abstract | An object of the present invention is to provide a technique for forming a film having no interface in a film and having a film quality characteristic not on a single substrate.nThe gas supply unit (6A) supplies the first material gas from the discharge port (615) to the upstream side in the transport direction of the processing space (V), and the gas supply unit (6B) flows downstream from the discharge port (625) to the processing space (V). The second material gas is supplied to the side. Thereby, in the inside of the processing space (V), an environment in which the space filled with the first material gas continuously changes from the space in which the first material gas is filled to the space in which the second material gas is filled is formed from the upstream side to the downstream side. The plasma CVD process is performed while the substrate (9) is conveyed at a position facing the processing space (V). Therefore, the composition of the CVD film (110) formed on the main surface of the substrate (9) becomes a composition that continuously changes from the first material composition to the second material composition in the normal direction away from the main surface. |
| priorityDate | 2013-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.