| abstract |
The present invention provides a semiconductor process having high sensitivity and resolution, small line edge roughness (LER), excellent pattern shape and stability over time, and low outgas generation when forming a very fine pattern having a line width of 50 nm or less. A resist composition is used. The resist composition for a semiconductor process includes (A) a compound represented by the following formula (I).nIn the above formula (I), R1 represents an alkyl group, a cycloalkyl group or an aryl group, and R2 represents a monovalent organic group. R3 to R6 each represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or a halogen atom. Wherein R3 and R4, R4 and R5, or R5 and R6 may be bonded to form an alicyclic or aromatic ring. X represents an oxygen atom or a sulfur atom. |