Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e5c121269689cbab9b3a4548b15caf3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bb4ee28d43b5e8d4a3c5141fa9bcfeb0 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3142 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-30 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D209-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-1135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-215 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-3417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D209-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L65-00 |
filingDate |
2014-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4b51bd81cf1d93d4925a3b21b2302cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b111cee6930d3399b843cfe1557b3e1b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d9867035620345ad6ff2cef25d86930 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a427d4b32703410750d7675ebfa2082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c0b25cebe4aadf6acd4f8f62ec4e88b |
publicationDate |
2015-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201512170-A |
titleOfInvention |
Fullerene derivatives and n-type semiconductor materials |
abstract |
The present invention is to provide an n-type semiconductor, and in particular to provide an n-type semiconductor for use as a photoelectric conversion element such as an organic thin film solar cell, and to have a material having excellent properties.nThe present invention provides the formula (1) having a purity of 99% or more as defined later:n□n[wherein, ring A represents a C60 fullerene; R1 represents a hydrogen atom and may have 1nAn n-type semiconductor material composed of an alkyl group having at least one substituent or an aryl group having one or more substituents; and Ar representing a fullerene derivative represented by an aryl group substituted by one or more alkyl groups] .nThe aforementioned purity is defined as the absolute value of the difference between the analytical value and the theoretical value of the elemental analysis of carbon, the absolute value of the difference between the analytical value and the theoretical value of the elemental analysis of hydrogen, and the analytical value of the elemental analysis for nitrogen. The largest of the absolute values of the difference from the theoretical value is Dmax (%): purity (%) = 100 - Dmax (%). |
priorityDate |
2013-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |