http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201511334-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0749dd1196065a3202ccc2fbf41894cd |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 |
| filingDate | 2014-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d94b3f94f7c9392ce31654686ff0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e286861a92b81dfba29fbc6453f179ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0043de71ec28594a9c3e482dbffaf2ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d26f76f241bbac96e0b6855a20d6ee31 |
| publicationDate | 2015-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201511334-A |
| titleOfInvention | Nanowire light-emitting diode structure with reduced leakage and manufacturing method thereof |
| abstract | The present invention discloses a semiconductor device comprising a plurality of first conductivity type semiconductor nanowire cores extending from a surface of a support member through an opening in a mask layer and in the nanowire cores A plurality of semiconductor shell layers extending upward. Each of the semiconductor shell layers includes at least one semiconductor inner shell layer extending around the respective nanowire cores and a second conductivity type semiconductor outer shell layer extending around the inner shell layer. A first electrode layer contacts the second conductivity type semiconductor outer casing layer and extends into a space between the semiconductor shell layers. The semiconductor inner shell layer includes a semiconductor foot portion extending in the space between the semiconductor shell layers on the insulating mask layer under the first electrode and the respective second conductive type semiconductor shell layers . The present invention also discloses a semiconductor device and method comprising an insulating layer in the spaces between an insulating mask layer and a first electrode between the semiconductor shell layers. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I758392-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I638991-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10088424-B2 |
| priorityDate | 2013-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.