| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate |
2014-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d49ac0384c644161d465804864c7911
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_666662356feea7e0ad0905fa6e25d3bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd6f88429278b7424fed207e724c2107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04e7d87267a8ea05ea22d44ebd21f34a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4549282d410f48ae3859412866f7b796 |
| publicationDate |
2015-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201511132-A |
| titleOfInvention |
Method for forming SiOCH film by annealing with organic amine decane |
| abstract |
The present invention discloses a method of forming an improved SiOCH film having a low dielectric constant (k) on a substrate. The method comprises: providing a low-k SiOCH film formed on a substrate by flow chemical vapor deposition; exposing the low-k SiOCH film to a gas having molecules containing Si-N bonds without applying electromagnetic It is possible to add Si-O bonds and/or Si-C bonds in the film; and then to cure the low-k SiOCH film. |
| priorityDate |
2013-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |