| abstract |
A method of fabricating a semiconductor device comprising forming a thin film comprising germanium, oxygen, and carbon or a thin film comprising germanium, oxygen, carbon, and nitrogen on a substrate by performing a predetermined number of cycles. The cycle includes supplying a precursor gas used as a helium source and a carbon source or a precursor gas used as a helium source but not a carbon source, and a first catalyst gas to the substrate; supplying the oxidizing gas and the second catalyst gas To the substrate; and supplying a reformed gas comprising at least one selected from the group consisting of carbon and nitrogen to the substrate. |