| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2014-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_586895aa1b81c721a521af2c2945bb5b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2599a81538d6d09a725e70c147c3ff08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b82957981af36c86fcb0497fcf6affbf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c6dad123aba30d3089cece6ba62ba0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c4da0cf433995aca6b20b4d3d6240ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8130af925c6a1eb094a233aaee403125 |
| publicationDate |
2015-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201508837-A |
| titleOfInvention |
Thin film transistor manufacturing method |
| abstract |
The present invention generally relates to a method of fabricating a thin film transistor (TFT) and a thin film transistor. When a plurality of layers are used for the semiconductor material of the TFT, a negative threshold voltage (Vth) shift may be caused. Negative Vth shift can be negated by exposing the semiconductor layer to an oxygen containing plasma and/or forming an etch stop layer thereon. |
| priorityDate |
2013-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |