http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201507021-A

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filingDate 2008-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c6267d8c775da162e94c833c3742ac
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publicationDate 2015-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201507021-A
titleOfInvention Thin film transistor and method of manufacturing display device
abstract The present invention provides a method of manufacturing a semiconductor device having a small leakage current and high reliability. In the method of manufacturing a thin film transistor, a back channel portion is formed in a thin film transistor by etching using a resist mask, and a portion of the back channel portion is removed by removing the resist mask, and the remaining portion is removed. An etching residue or the like on the back channel portion can thereby reduce the generated leakage current. When the back channel portion is further etched, it can be performed by dry etching without deflection.
priorityDate 2007-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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