http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201507013-A

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publicationDate 2015-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201507013-A
titleOfInvention Semiconductor device manufacturing method
abstract Forming an NMOS gate stack made of a first high dielectric film, an NMOS gate metal, and a first semiconductor film in a peripheral circuit region on the semiconductor substrate; to form a predetermined step between the NMOS gate stack and the NMOS gate stack a method of forming a PMOS gate stack made of a second high dielectric film, a PMOS gate metal, and a second semiconductor film; forming a third semiconductor film so as to completely overlap the semiconductor substrate; 3 The semiconductor film is planarized by CMP (Chemical Mechanical Polishing) to form a fourth semiconductor film which is slightly thinner than the third semiconductor film.
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