| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31da94917d1067c89f7e22444c88a836 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2014-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63719b40290a3d46a59f3b11f214de39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21e363104cb34d2821171eb65b5478de
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc5968575535915da8b4ed86c4873cc8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_569ff9da43da24dc795f6f6157e3aed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_819435f6e7b5c44251bf2539f0a8c9e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d650bac543924707375d07a4f7876c8 |
| publicationDate |
2015-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201505081-A |
| titleOfInvention |
Integrated circuit for replacing metal gate with improved threshold voltage performance and manufacturing method thereof |
| abstract |
The present invention provides an integrated circuit of a replacement metal gate having improved threshold voltage performance and a method of fabricating the same. A method includes: providing a dielectric layer overlying a semiconductor substrate, the dielectric layer having a first recess and a second recess; forming a gate dielectric layer in the first recess and the second recess; Forming a first barrier layer overlying the gate dielectric layer; forming a success function material in the first recess and the second recess; recessing the work function material and the first barrier layer to the In the first recess and the second recess, the work function material and the first barrier layer form a concave surface; the gate dielectric layer is recessed into the first recess and the second recess; Depositing a conductive gate electrode material such that the conductive gate electrode material fills the first recess and the second recess; and recessing the conductive gate electrode material into the first recess and the second recess. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437484-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I760330-B |
| priorityDate |
2013-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |