http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201505073-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
filingDate | 2013-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
publicationDate | 2015-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-201505073-A |
titleOfInvention | Oxide semiconductor film, method of fabricating oxide semiconductor film, and semiconductor device |
abstract | One of the objects of one embodiment of the present invention is to provide a crystalline oxide semiconductor film and a semiconductor device using the same. One aspect of the present invention is an oxide semiconductor film on a substrate, wherein the oxide semiconductor film includes a plurality of plate-like particles, and the plurality of plate-like particles have a layer sandwich including a gallium atom, a zinc atom, and an oxygen atom. The upper and lower structures of the layer containing the indium atom and the oxygen atom are arranged, and a plurality of flat particles are arranged in an irregular direction, and a grain boundary is not observed when a transmission electron microscope is used. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11735403-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11081326-B2 |
priorityDate | 2013-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.